Method of reducing plasma charging damage during dielectric etch process for dual damascene interconnect structures

ABSTRACT

Charging damage, caused by electron shading during plasma etching in a dual damascene structure, is alleviated by first depositing a protective conductive layer which provides a conductive path for maintaining charge balance in the etched structures. This conductive layer reduces the buildup of unbalanced positive charge in the contact opening, and the damage done to underlying layers caused by the resultant tunneling current. Further, if the protective conductive layer comprises a material which can also serve as an interdiffusion barrier layer for the contact opening fill material, a separate subsequent step to deposit such a barrier layer on the contact opening sidewall is avoided. Further, in the process of doing lithography on the trench etch resist layer, the protective conductive layer also functions as an antireflective coating, permitting the stepper to accurately focus the desired pattern.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to the alleviation of chargebuildup on integrated circuit components during dry plasma etching ofsemiconductor interconnect feedthrough structures.

[0003] 2. Brief Description of the Background Art

[0004] In the quest for ever-higher circuit densities in modem verylarge scale integrated circuit semiconductors, engineers have moved fromconventional chip layouts, in which interconnects between active regionson the chip are formed by metallic, generally aluminum, conductors inthe plane of the devices, connected layer-to-layer mostly at the outeredges, to dual damascene architecture. In a dual-damascene structure,multiple layers of active devices are separated by layers of dielectricmaterial, which are traversed within a given layer by trenches filledwith conductive materials, which in turn are connected layer-to-layer byinterconnects formed by filling through-openings with conductivematerials. These contact openings, typically referred to as vias, areetched through the intervening dielectric layer or layers.

[0005] These trenches and contact openings are etched in the dielectriclayers by means of dry etching, utilizing a plasma generated by exposingappropriate etchant source gases, often halogen-comprising gases, topowerful electromagnetic fields. The resultant plasma consists of freeelectrons, positively charged ions, and various high energy species ofthe plasma source gas. The workpiece to be etched typically has adesired pattern superimposed upon it in some form of mask. The mask isgenerally formed photolithographically upon an organic photoresistmaterial, which is developed to provide open areas where etching isdesired.

[0006] To achieve anisotropic etching, that is, etching which isgenerally unidirectional, so that positively charged active speciestravel vertically downward through the opening in the resist layertoward the etch front within the deepening etched feature, the workpieceis maintained at a negative electrical potential. This serves toaccelerate positively-charged species toward the target surface, butleaves the electrons in the plasma less able to penetrate to the bottomof the etched feature.

[0007] This phenomenon, the ability of only positively charged highenergy species to penetrate to the lower regions of the etch front,while electrons accumulate near the top of the opening, is calledelectron shading. The electron shading effect is self-perpetuating,since the accumulation of electrons near the opening creates a localelectric field which further repels electrons from entering, butcontinues to easily permit the positively charged high energy species,such as ions, accelerated by the electrical potential, to penetrate tothe full depth of the etched feature. When the resultant positive chargenear the bottom of the feature becomes sufficiently high, it results ina tunneling current which can do severe damage to underlying layers.

[0008] The aspect ratio of a feature typically refers to the ratio ofthe depth of the feature to its smallest horizontal cross-sectionaldimension. The electron shading effect, and the resultant chargingdamage to the structure, begin to be significant in etched featureshaving an aspect ratio greater than about 2. The electron shading effectgets worse as the aspect ratio increases, since the electronaccumulation near the opening and top sidewalls of the feature makes itincreasingly difficult for anything but the positively charged highenergy species to get past that entrance and any distance down into thedeepening etched feature.

[0009] FIGS. 1A-1G show a typical set of process steps for creating adual damascene structure. Electron shading effects are often a seriousproblem during fabrication of dual damascene structures.

[0010] In FIG. 1A, a conductor 102, such as copper or aluminum or alloysthereof, is embedded in a dielectric 100. An upper portion of theconductor is contacted at sidewall 103 by a layer of a first dielectrichardmask 104. The upper surface 105 of dielectric hardmask layer 104 andthe upper surface 107 of conductor 102, are covered by an etch stoplayer 106, which is typically a dielectric such as Si₃N₄, SiON, or SiC.A layer of dielectric 108, which is typically a low-k dielectricoverlies the etch stop layer 106, and is itself overlain by a seconddielectric hardmask layer 110. (A “low-k dielectric” is one with arelative dielectric permitivity, κ, less than that of SiO₂, or less thanabout 3.9.) A via or other contact opening 116 has been etched throughdielectric hardmask layer 110 and dielectric layer 108, to the etch stoplayer 106.

[0011] In FIG. 1B, a layer of photoresist material 118 has been appliedcovering the surface of the structure, and partially filling in thecontact opening 116.

[0012] In FIG. 1C, the photoresist layer 118 has been developed,providing a patterned mask for etching of a trench which will overliethe contact opening 116.

[0013] In FIG. 1D, anisotropic etching is being performed to form trench120 through dielectric hardmask layer 110 and partly into dielectriclayer 108. It is at this point in the prior art etching process toproduce trench 120 that the problem of electron shading arises, asillustrated in FIG. 1D. Accumulations of excess electrons 130 form anunbalanced negative charge near the entrance 126 and on the uppersidewalls 128 of contact opening 116, and to a lesser extent on theupper sidewalls 124 of developing trench 120. As positively chargedenergetic species 132 continue to reach the bottom 117 of contactopening 116, but few if any electrons 130 are able to do so, acorresponding accumulation of excess positive charge builds up there,causing a tunneling current 134 which can do serious damage to theunderlying conductor 102. Such damage is illustrated by numerals 136 inFIGS. 1E through 1G.

[0014] In FIG. 1E, trench 120 has been etched, directly over contactopening 116, through dielectric hardmask layer 110 and dielectric layer108. At the same time, the bottom 117 of contact opening 116 has beenetched down at least partially through etch stop layer 106.

[0015] Subsequently, the residue of photoresist layer 118 has beenremoved, as illustrated in FIG. 1F. Finally, in FIG. 1G, the remainderof the etch-stop layer 106 at the bottom of contact opening 116 has beenremoved, to permit electrical contact with the conductor 102, asillustrated in FIG. 1G. Contact opening 116 and trench 120 aresubsequently filled with conductive material to form the interconnectbetween the lower and upper layers of devices. This process can berepeated as desired to form a multilayered structure in which the activelayers are electrically interconnected by conductive fill materialplaced in the contact openings and trenches.

[0016] Various techniques have been used in an attempt to reduce oreliminate charging damage to semiconductor devices occurring during theetching process. For example, U.S. Pat. No. 5,468,341, to Samukawa (SeeAbstract.), discloses a method and apparatus wherein pulse modulation ofthe electric fields producing the etching plasma are controlled toproduce a pulse interval shorter than about 10 μsec. This is said toprovide advantageous process conditions, including a reduction in chargeaccumulation. U.S. Pat. No. 5,441,849, to Shiraishi, et al (Seeabstract.) discloses a method of solving a distinct but similar problemof electrical charge accumulation During the formation of the latentimage in a photoresist layer, the photoresist is exposed to a chargedparticle beam, where electrical charge accumulation causes positionaldeviation of the imaged pattern. By using a bottom-resist layer ofmaterial which can be rendered conductive by simultaneous exposure toactinic radiation (such as ultraviolet light, X-ray, or infrared light),the charge accumulation is alleviated.

SUMMARY OF THE INVENTION

[0017] The present invention reduces the amount of charging damagecaused by electron shading during the process of plasma etching a trenchoverlying an existing electrical contact opening. This is accomplishedby introducing a processing step that adds a protective layer ofconductive material, generally a metal, conductive metal nitride,conductive metal oxide, or a combination thereof, lining the contactopening. This layer provides a conductive path for maintaining chargebalance in the etched structures during the etching process. Thisprotective conductive layer greatly reduces or eliminates the chargebuildup caused by electron shading, and the damage done to the layers ator near the bottom of the contact opening by the tunneling currentinduced by such charge buildup, during trench etching. To the extentthat the protective conductive layer also remains present between thedielectric layer being etched and a photoresist layer defining thetrench, that protective conductive layer acts to equalize chargelaterally at the top of the dielectric layer.

[0018] For purposes of describing an embodiment of the invention, FIGS.2A through 2I illustrate a method of reducing plasma-induced chargingdamage during etching of a trench in a dielectric layer which forms partof a dual damascene semiconductor structure. For example, the methodcomprises:

[0019] a. providing a semiconductor structure including an electricalcontact opening through a dielectric layer overlying an etch stop layer,which etch stop layer overlies a conductive region in the semiconductorstructure;

[0020] b. applying a protective layer of a conductive material oversurfaces of the electrical contact opening and over exposed horizontalsurfaces adjacent the contact opening;

[0021] c. applying a layer of photoresist material over the uppersurface of the semiconductor structure;

[0022] d. patterning the layer of photoresist material; and

[0023] e. etching a trench overlying the electrical contact opening andthrough a portion of the dielectric layer, wherein charging damage tothe semiconductor structure which occurs during etching is reduced bythe presence of the layer of protective conductive material.

[0024] Subsequent processing steps are carried out to remove photoresistresidue and an etch stop at the bottom of the contact opening. Theresultant dual damascene structure exhibits a contact opening havingsidewalls lined with the protective conductive layer material, ready forfilling of the trench and contact opening with a conductive material.Additional steps may then be carried out to add additional layer orlayers of materials to provide a particular semiconductor device.

[0025] When the protective conductive layer comprises a material whichcan also serve as a diffusion barrier layer for the conductive fillmaterial used to fill the trench and contact opening, additionalprocessing steps to add such a barrier layer may be avoided.

[0026] In instances where the conductive protective layer can functionas an antireflective coating (“ARC”) during fabrication of the trenchoverlying the contact opening, separate application of an ARC layer maybe avoided.

BRIEF DESCRIPTION OF THE DRAWINGS

[0027] FIGS. 1A-1G, discussed in the Background of the Inventionsection, above, show a comparative example process of etching a trenchoverlying a contact opening to provide a conductive interconnect througha dielectric layer or layers separating two conductive regions in a dualdamascene semiconductor structure. As previously discussed herein, FIG.1D particularly illustrates the mechanism of electron shading, andresultant charge buildup and charging damage, incurred in carrying outsuch an etching process.

[0028] FIGS. 2A-2I illustrate the present invention.

[0029]FIG. 2A shows a starting structure for one embodiment of theinvention, including a conductor 202, such as s or aluminum or alloysthereof, embedded in a dielectric 200, an upper portion of the conductorcontacted at sidewall 203 by a layer of a first dielectric hardmask 204,an upper surface 205 of dielectric hardmask layer 204 and an uppersurface 207 of conductor 202, both covered by an etch stop layer 206,typically a dielectric such as Si₃N₄, SiON, or SiC. A layer ofdielectric 208, which is typically a low-k dielectric, overlies the etchstop layer 206, and is itself overlain by a second dielectric hardmasklayer 210. An electrical contact opening 216 has been opened from theupper surface of the dielectric hardmask layer 210 downward through boththat hardmask layer 210 and underlying dielectric layer 208, ending atthe upper surface of underlying etch stop later 206.

[0030]FIG. 2B shows the application of protective conductive layer 222over the structure of FIG. 2A.

[0031]FIG. 2C shows a layer of photoresist material 218 applied over theprotective conductive layer 222.

[0032]FIG. 2D shows the developed photoresist layer 218, providing apatterned mask defining the trench to be etched.

[0033]FIG. 2E shows the protective conductive layer 222 etched off thetop of the exposed upper surface 223 of the second dielectric hardmasklayer 210, except where it is covered by the patterned photoresistmasking layer 218. The thickness of the protective conductive layer 222at the bottom of the contact opening 216 is typically reduced duringremoval of the protective conductive layer 222 from the upper surface223 of the second dielectric hardmask layer 210.

[0034]FIG. 2F shows the etching of a trench 220 overlying the electricalcontact opening 216, and illustrates how the present invention reducescharging damage relative to the prior art process.

[0035]FIG. 2G shows the removal of the remaining exposed portion ofprotective conductive layer 222 and a portion of the etch stop layer 206at the bottom of the contact opening 216.

[0036]FIG. 2H shows the removal of photoresist residue.

[0037]FIG. 2I shows the removal of residual protective conductive layer222 from the upper surface 225 of the dielectric layer 208, and removalof the remaining etch stop layer 206 from the bottom of the contactopening 216.

DETAILED DESCRIPTION OF THE INVENTION

[0038] I. Definitions

[0039] As a preface to the detailed description, it should be notedthat, as used in this specification and the appended claims, thesingular forms “a”, “an”, and “the” include plural referents, unless thecontext clearly dictates otherwise.

[0040] Specific terminology of particular importance to the descriptionof the present invention is defined in context in the specification.

[0041] II. Apparatus for Practicing the Invention

[0042] The method of the present invention can be carried out invirtually any conventional semiconductor processing system having thecapability of performing dry plasma etching of dielectric and conductivematerial layers. The steps described herein were carried out in aSuper-e, eMax, or IPS etcher, commercially available from AppliedMaterials, Inc., Santa Clara, Calif. Although the above apparatusprovides excellent results, it is expected that the method can also becarried out in other apparatus of various kinds known in the art,including, but not limited to, RF generated parallel plate; electroncyclotron resonance (ECR); high-density reflected electron; heliconwave; inductively coupled plasma(ICP); and transformer coupled plasma(TCP) apparatus. Examples of such processing apparatus are described inU.S. Pat. Nos. 6,095,084; 6,077,384; 6,074,512; 6,071,372; 6,063,233;6,054,013; 6,036,878; 6,026,762; 6,020,686; 5,976,308; and 5,900,064,each of which is hereby incorporated by reference. One skilled in theart of semiconductor processing will be aware of, or be able todetermine without undue experimentation, the appropriate processconditions for carrying out the etching of dielectric and conductivelayers in other types of etchers, available in the art.

[0043] III Detailed Description of the Method

[0044] In the present invention, charging damage to a semiconductorstructure, caused by electron shading during plasma etching in a dualdamascene structure, is alleviated by first depositing a protectiveconductive layer which provides a conductive path for maintaining chargebalance in the etched structures. This conductive layer reduces thebuildup of unbalanced positive charge in the contact opening, andconsequently the damage done to underlying layers by the resultanttunneling current.

[0045] The starting structure for this illustrative embodiment of thepresent invention is as shown in FIG. 2A, in which a conductor 202, suchas copper or aluminum or alloys thereof, is embedded in a dielectric200, an upper portion of the conductor is contacted at sidewall 203 by alayer of a first dielectric hardmask 204, and an upper surface 205 ofdielectric hardmask layer 204 and an upper surface 207 of conductor 202are both covered by an etch stop layer 206, typically a dielectric suchas Si₃N₄, SiON, or SiC. An electrical contact opening 216 runs from theupper surface of the dielectric hardmask layer 210, downward throughthat hardmask layer 210 and underlying dielectric layer 208, terminatingat the upper surface of underlying etch stop layer 206.

[0046] In the present invention a protective conductive layer 222, asshown in FIG. 2B, is deposited over the top of the dielectric hardmasklayer 210, including on the floor and sidewalls of previously formedcontact opening 216. The deposition of protective conductive layer 222is advantageously carried out using Physical Vapor Deposition (“PVD”),including DC or RF sputtering or ionized physical vapor deposition, atleast to the point where PVD can no longer reach the bottom of a highaspect ratio contact opening. It can also be carried out using chemicalvapor deposition, (“CVD”), plasma-enhanced CVD (“PECVD”), or metalorganic chemical vapor deposition (“MOCVD”), or combinations of thesetechniques.

[0047] The protective conductive layer 222 comprises a conductivematerial, generally a metal since it will be present in a very thin filmand must permit sufficient charge mobility to largely or whollyneutralize the problematic excess positive charge at the bottom of thecontact opening. It will often be advantageous for the protectiveconductive layer to comprise a material which can function as a barrierlayer against the interdiffusion of copper or other conductors used tofill the contact opening and other materials present in thesemiconductor structure. Depending upon the conductive materials beingused to fill the contact opening, such conductive materials as Ti, TiN,Ta, TaN, W, WN, Al, Pt, Ir, IrO_(x), Ru, RuO_(x), Rh, Ag, orcombinations thereof, are highly appropriate materials for theprotective conductive layer.

[0048] Once the protective conductive layer 222 is in place, as in FIG.2B, a layer of photoresist 218 is applied, and covers the protectiveconductive layer 222, including partially filling contact opening 216,as shown in FIG. 2C.

[0049] The photoresist layer 218 is then patterned, by being exposed anddeveloped, leaving a portion of the protective conductive layer 222,overlying second dielectric hardmask 210, covered by resist 218, and aportion exposed, as shown in FIG. 2D.

[0050] During the trench etch step, the exposed area of protectiveconductive layer 222 is first anisotropically etched from the exposedportion of the top of the dielectric hardmask layer 210, and at leastpartially from the bottom 217 of the contact opening 216, but remains onthe sidewalls of the contact opening, as shown in FIG. 2E.

[0051] Further anisotropic etching is carried out, as illustrated inFIG. 2F, to etch the trench 220 into the dielectric hardmask 210 andunderlying dielectric layer 208. The present invention's protectiveconductive layer 222 on the contact opening 216 sidewall greatly reducescharging damage to the underlying structure, by permitting the mutualneutralization of the excess positive charge 232, which would otherwiseaccumulate in the bottom of the contact opening 216, and the excesselectrons 230, which would otherwise accumulate at the top of thecontact opening sidewall.

[0052] As also illustrated in FIG. 2F, the segments of protectiveconductive layer 222 remaining at the top of the trench, buried beneaththe resist layer 218, also serve to balance charge in the structure bycreating a grounding source, conducting away electric charges arisingthere, either because of electron 230 accumulation at the tops of thetrenches, or more generally because of non-uniformity in the plasmaacross the wafer.

[0053] With the benefit of charge dissipation through protectiveconductive layer 222, conductor 202 remains unharmed through the processof etching trench 220.

[0054]FIG. 2G illustrates that, by the time the trench 220 is etched toa desired depth, most or all of the remaining protective conductivelayer 222, and probably a portion of the etch stop layer 206, have alsobeen etched from the bottom of the contact opening 216. Because of theanisotropic etch process, however, the protective conductive layer 222remains intact on the sidewalls of the contact opening 216.

[0055] The remaining resist 218 is then stripped off, leaving exposedthe segments of protective conductive layer 222 overlying the dielectrichardmask layer 210, as shown in FIG. 2H.

[0056] Then, the protective conductive layer 222, both on top of thedielectric hardmask layer 210 and any remaining at the bottom of contactopening 216, and the remaining etch stop layer 206 at the bottom ofcontact opening 216, are anisotropically etched away, as shown in FIG.2I. This leaves the trench 220 and contact opening 216, the latter withnothing separating it from the underlying conductor 202, ready to befilled with conductor(s) to complete the interconnect between activelayers, followed by the subsequent fabrication of additional levelsabove, if desired.

[0057] As discussed above, the protective conductive layer 222 can bevirtually any conductor to realize the charge equalization advantages ofthe present invention, but is typically a metal, a conductive metalnitride, or a conductive metal oxide, or a combination thereof. When theprotective conductive layer is a metal nitride, for example, it may alsoserve as a barrier to interdiffusion of the conductor subsequently usedto fill the contact opening. This is an advantage, as it is possible toavoid a separate step for application of a diffusion barrier layer.Conductive materials which are also useful as barrier layers include Ti,TiN, Ta, TaN, W, and WN, for example and not by way of limitation. Oftenthe materials will be used in combination, such as Ti/TiN, Ta/TaN, andW/WN, again for example and not by way of limitation. The best choice ofmaterial for a given application depends upon the composition of thematerial to be used as a conductor to fill the contact opening and thetrench, and that of the dielectric layer or layers.

[0058] In performing the lithography for creation of the patternedphotoresist 118 to define the trench overlying the contact opening 116,the exposure tool, or “stepper,” positions the photolithographic mask toline up the trench properly above the etched contact opening, and tofocus the mask image on the right plane of the structure. This assures aproperly located and critically sharp lithographic image in the resistlayer, and promotes accurately produced features. This stepper functionsby indexing from optical targets at various locations on the variouslevels of the semiconductor structure. In the conventional process shownin comparative example in FIGS. 1A-1G, when attempting to locate thetarget for patterning the second or subsequent layers of resist, thestepper can sometimes confuse a reflected image of from an underlyingstructure for the actual target on which it is supposed to be focusing.This results in the stepper focusing at the wrong distance, which inturn produces an unsharp image in the photoresist, and ultimatelydegrades the quality of the lithographed lines in the device. However,when the method of the present invention is used, the protectiveconductive layer 222 that is placed over the device and in the contactopening before the trench etch step may also function as anantireflective coating (ARC) over the top of the semiconductorstructure, reducing or preventing such confusing multiple reflectedimages. The stepper can therefore more accurately focus on the correcttarget, producing a properly located and focused pattern on the resist,and an improved resist profile once developed, which in turn improve theetched feature accuracy and profile.

[0059] The above described embodiments are not intended to limit thescope of the present invention, as one skilled in the art can, in viewof the present disclosure, expand such embodiments to correspond withthe subject matter of the invention claimed below.

What is claimed is: 1 A method of reducing plasma-induced chargingdamage during etching of a trench in a dielectric layer which forms partof a dual damascene semiconductor structure, the method comprising: (a)providing a semiconductor structure including an electrical contactopening through a dielectric layer overlying an etch barrier layer,which barrier layer overlies a conductive region in said semiconductorstructure; (b) applying a protective layer of a conductive material oversurfaces of said electrical contact opening and over adjacent exposedhorizontal surfaces; (c) applying a layer of photoresist material oversaid adjacent exposed horizontal surfaces; (d) patterning said layer ofphotoresist material; and (e) etching a trench overlying said electricalcontact opening and through a portion of said adjacent exposedhorizontal surfaces, wherein charging damage to said semiconductorstructure which occurs during etching is reduced by the presence of saidprotective layer of conductive material.
 2. The method of claim 1,wherein said protective conductive layer deposited in step b comprises amaterial capable of functioning as a diffusion barrier layer.
 3. Themethod of claim 1, wherein said protective conductive layer deposited instep b comprises a material capable of functioning as an antireflectivecoating.
 4. The method of claim 1, wherein said dielectric layercomprises a low-k dielectric material exhibiting a relative dielectricpermitivity less of than about 3.9.
 5. The method of claim 1, whereinsaid protective conductive layer comprises a metal, or a conductivemetal nitride, or a conductive metal oxide, or a combination thereof. 6.The method of claim 1, wherein said protective conductive layer isformed from a material selected from the group consisting of Al, Pt, Rh,Ag, Ti, TiN, Ta, TaN, W, WN, Ir, IrO_(x), Ru, RuO_(x), and alloys andcombinations thereof.
 7. The method of claim 2, wherein said protectiveconductive layer is formed from a material selected from the groupconsisting of Ti, TiN, Ta, TaN, W, WN, and combinations thereof.
 8. Themethod of claim 7, wherein said protective conductive layer comprisesTi, TiN, or combinations thereof.
 9. The method of claim 7, wherein saidprotective conductive layer comprises Ta, TaN, or combinations thereof.10. The method of claim 7, wherein said protective conductive layercomprises W, WN, or combinations thereof.
 11. The method of claim 1,wherein said protective conductive layer is selected from the groupconsisting of Al, Pt, Ir, Ru, Rh, Ag, Ti, Ta, W, and alloys andcombinations thereof.
 12. The method of claim 11, wherein saidprotective conductive layer is Al and non-diffusing alloys thereof. 13.A method of reducing plasma-induced charging damage in a dielectrictrench etch process for a dual damascene semiconductor structure, saidmethod comprising the following steps, in the order stated: (a)providing a semiconductor structure comprising from bottom to top (1) asemiconductor substrate (2) a conductor embedded in said substrate,having an upper portion of said conductor contacted at its sidewall by alayer of dielectric hardmask, an upper surface of said conductor and anupper surface of said hardmask layer being covered by an etch stoplayer, (3) a layer of a first dielectric material overlying said etchstop layer, (4) a second dielectric hardmask layer overlying said layerof said second dielectric material, (5) a contact opening etcheddownward from a top surface of said second dielectric hardmask layer,through said second dielectric layer, said contact opening comprising asidewall extending downward through said second dielectric hardmasklayer and said second dielectric layer, and ending at a floor of saidcontact opening at said etch stop layer; (b) depositing upon an exposedupper surface of said second dielectric hardmask layer, and upon saidsidewall of said contact opening, and upon said floor of said contactopening, a continuous layer of a protective conductive material; (c)applying a layer of photoresist material; (d) patterning said layer ofphotoresist material in a manner defining the location for plasmaetching of a trench in an upper surface of said second dielectrichardmask layer, immediately over and communicating with said contactopening; (e) anisotropically plasma etching said trench downward andthrough said second dielectric hardmask layer, and downward into, butnot through, said second dielectric layer, to a nominal trench depth;(f) removing said photoresist layer which remains following said etchingof said trench; (g) anisotropically plasma etching away said protectiveconductive layer, if any, which remains upon said second dielectrichardmask layer or upon said floor of said contact opening, and thatportion of said etch stop layer which is exposed beneath said floor ofsaid contact opening, but not said protective conductive layer whichremains upon said sidewall of said contact opening; and (h)anisotropically plasma etching away any of said etch stop layer materialremaining on the floor of said contact opening after completion of step(g), thereby exposing a surface of said conductor beneath said floor ofsaid contact opening.
 14. The method of claim 13, wherein saidprotective conductive layer deposited in step b comprises a materialcapable of functioning as a diffusion barrier layer.
 15. The method ofclaim 13, wherein said protective conductive layer deposited in step bcomprises a material capable of functioning as an antireflectivecoating.
 16. The method of claim 13, wherein said dielectric layercomprises a low-k dielectric material exhibiting a relative dielectricpermitivity less of than about 3.9.
 17. The method of claim 13, whereinsaid protective conductive layer comprises a metal, or a conductivemetal nitride, or a conductive metal oxide, or a combination thereof.18. The method of claim 13, wherein said protective conductive layer isformed from a material selected from the group consisting of Al, Pt, Rh,Ag, Ti, TiN, Ta, TaN, W, WN, Ir, IrO_(x), Ru, RuO_(x), and alloys andcombinations thereof.
 19. The method of claim 14, wherein saidprotective conductive layer is formed from a material selected from thegroup consisting of Ti, TiN, Ta, TaN, W, WN, and combinations thereof.20. The method of claim 19, wherein said protective conductive layercomprises Ti, TiN, or combinations thereof.
 21. The method of claim 19,wherein said protective conductive layer comprises Ta, TaN, orcombinations thereof.
 22. The method of claim 19, wherein saidprotective conductive layer comprises W, WN, or combinations thereof.23. The method of claim 13, wherein said protective conductive layer isselected from the group consisting of Al, Pt, Ir, Ru, Rh, Ag, Ti, Ta, W,and alloys and combinations thereof.
 24. The method of claim 23, whereinsaid protective conductive layer is Al and non-diffusing alloys thereof.